牛艺蒙;刘海峰;

• 1:北京航空航天大学生物与医学工程学院

摘要(Abstract)：

以碳化硅晶须(SiC-W)为原料,采用一步法热氧化工艺制备核壳结构SiC-W@SiO_2功能体。利用红外光谱仪、X线衍射仪、动态接触角测试仪、透射电镜、扫描电镜,以及力学试验机、精密阻抗分析仪、耐压击穿测试仪及铁电测试综合系统,表征核壳结构功能体及其PVDF基复合材料的结构、界面、组成、拉伸、介电、击穿与储能等特性。确定热氧化处理条件与SiO_2壳层厚度的对应关系,考察SiO_2壳层对复合材料的性能影响。结果表明:随SiO_2壳层的引入和厚度的增加,复合材料的介电损耗和电导率逐渐降低,介电常数先增加后减小,特征击穿场强大幅度提高,能量释放效率逐渐增加。当SiO_2壳层厚度为13~14nm时,复合材料的能量储存密度和能量释放密度取得最优值,分别为4.03J/cm~3和1.78J/cm~3;当SiO_2壳层厚度为20~21nm时,能量释放效率达到55.1%。

关键词(KeyWords)：碳化硅;核壳结构;复合材料;介电性能;储能特性

Abstract:

Keywords:

基金项目(Foundation):国家自然科学基金项目(31470938)

作者(Author):牛艺蒙;刘海峰;

Email:

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